- Conference date: 2–6 September 2012
- Location: São Sebastião, São Paulo, Brazil
Using the van Der Pauw methodology, the surface resistivity of irradiated tungsten films deposited on Silicon substrate was measured. The films were exposed to γ radiation using a isotopic source in three irradiation stages attaining 40.35 kGy in total dose. The obtained results for superficial resistivity display a time annealing features and their values are proportional to the total dose.
- Thin films
- Electrical resistivity
- Elemental semiconductors
- Gamma ray effects
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