- Conference date: 1–2 February 2013
- Location: Bikaner, Rajasthan, India
Doping with transition metal impurities greatly influence the optical and electrical properties of semiconductors. ZnSe is an n-type semiconducting material with wider band gap of ∼2.7 eV at room temperature and transmittance range (0.5–22 μm). Polyvinyl alcohol, a water-soluble polymer is used as capping polymer to stabilize the ZnSe nanoparticles. Transition Metal ions ( and ) doped ZnSe nanoparticles were prepared in the presence of PVA as capping agent by simple chemical route. For the prepared samples different physical parameters like refractive index, density, ionic concentration and electronic polarizability are measured for different transition metal ions. The correlation between these parameters is discussed.
- II-VI semiconductors
- Transition metals
- Electrical properties
Y. K. Semertzidis, M. Aoki, M. Auzinsh, V. Balakin, A. Bazhan, G. W. Bennett, R. M. Carey, P. Cushman, P. T. Debevec, A. Dudnikov, F. J. M. Farley, D. W. Hertzog, M. Iwasaki, K. Jungmann, D. Kawall, B. Khazin, I. B. Khriplovich, B. Kirk, Y. Kuno, D. M. Lazarus, L. B. Leipuner, V. Logashenko, K. R. Lynch, W. J. Marciano, R. McNabb, W. Meng, J. P. Miller, W. M. Morse, C. J. G. Onderwater, Y. F. Orlov, C. S. Ozben, R. Prigl, S. Rescia, B. L. Roberts, N. Shafer‐Ray, A. Silenko, E. J. Stephenson, K. Yoshimura and EDM Collaboration
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