- Conference date: 1–2 February 2013
- Location: Bikaner, Rajasthan, India
Zinc oxide thin films deposited on glass and p-type silicon (100) substrates by DC reactive magnetron sputtering are reported here. The XRD investigations confirmed that the thin films deposited by this technique have hexagonal wurtzite structure. AFM results present the surface morphology and roughness of the deposited thin films. From the optical absorption spectrum, the band gap of the thin film is found to be ∼ 3.2 eV. The photoluminescence spectrum of the sample has an UV emission peak centered at 407 nm with broad visible emission in the range of 500-580 nm.
- Thin film deposition
- Sputter deposition
- Thin film structure
- Ultraviolet spectra
Y. K. Semertzidis, M. Aoki, M. Auzinsh, V. Balakin, A. Bazhan, G. W. Bennett, R. M. Carey, P. Cushman, P. T. Debevec, A. Dudnikov, F. J. M. Farley, D. W. Hertzog, M. Iwasaki, K. Jungmann, D. Kawall, B. Khazin, I. B. Khriplovich, B. Kirk, Y. Kuno, D. M. Lazarus, L. B. Leipuner, V. Logashenko, K. R. Lynch, W. J. Marciano, R. McNabb, W. Meng, J. P. Miller, W. M. Morse, C. J. G. Onderwater, Y. F. Orlov, C. S. Ozben, R. Prigl, S. Rescia, B. L. Roberts, N. Shafer‐Ray, A. Silenko, E. J. Stephenson, K. Yoshimura and EDM Collaboration
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