Roughening transition of Si(hhm) surface with m/h=1.4−1.5 studied by UHV‐REM
- Conference date: 19−23 Sep 1994
- Location: Cancun (Mexico)
Structural phase transition of Si(hhm) surface with m/h=1.4 to 1.5 was studied by reflection electron microscopy (REM). Finely spaced diffraction spots in reflection high energy electron diffraction (RHEED) pattern disappear as the surface is heated above 900 °C and reflections from the bulk structure remain. In REM images, steps in the crystallographic directions changes into curved one. At temperatures around 920 °C lattice fringes corresponding to the finely spaced RHEED spots disappear, which is followed by disappearance of step images. These observations suggest a roughening transition of the surface.
- Surface phase transitions
- Reflection high energy electron diffraction
- Surface structure
- Surface patterning
- Crystal structure
- Electron microscopy
- Phase transitions
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