- Conference date: 1-3 Apr 1997
- Location: Savannah, Georgia (USA)
Radio frequency (RF) power is used in several ways to generate plasmas and control their properties for material processing applications. This presentation will focus on RF plasma excitation in “inductively-coupled” plasmas (ICP) as used in the semiconductor industry for integrated circuit manufacturing. An overview will be given of mechanisms of both inductive and capacitive RF coupling, as used separately for plasma generation and control of ion bombardment at the substrate being processed, respectively. The physics of RF power coupling will be described in terms of relevant spatial and temporal system parameters, and their implications for process quality. Specific topics include practical considerations associated with the choice of RF frequency and plasma uniformity.
- Inductively coupled plasma
- Process monitoring and control
- Materials processing
- Materials properties
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