- Conference date: 4-6 Jun 1997
- Location: Tokyo (Japan)
Si-surface amorphization effects were evaluated to form low-resistance films for sub-quarter-micron CMOS devices. It was found that the C49-to-C54 phase transformation in the film is enhanced by the Si-surface amorphization. Furthermore, the activation energy in this transformation decreased from 4.4 eV to as a result of the Si-surface amorphization.
- Phase transitions
- Thin film devices
- Activation energies
- Metal insulator semiconductor structures
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