- Conference date: 23-27 March 1998
- Location: Gaithersburg, Maryland (USA)
As the semiconductor industry roadmap passes through the 0.1 μm technology node, the junction depth of the transistor source/drain extension will be required to be less than 20 nm and the well doping will be near 1.0 μm in depth. The development of advanced ULSI processing techniques requires the evolution of new metrology tools to ensure process capability. High sensitivity (ppb) coupled with excellent depth resolution (1 nm) makes SIMS the technique of choice for measuring the in-depth chemical distribution of these dopants with high precision and accuracy. This paper will discuss the issues, which impact the accuracy and precision of SIMS measurements of ion implants (both shallow and deep). First this paper will discuss common uses of the SIMS technique in the technology development and manufacturing of advanced ULSI processes. In the second part of this paper the ability of SIMS to make high precision measurements of ion implant depth profiles will be studied.
- Secondary ion mass spectroscopy
- High current technology
- Ion implantation
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