- Conference date: 23-27 March 1998
- Location: Gaithersburg, Maryland (USA)
The Starting Materials requirements in the 1997 Semiconductor Industry Association (SIA) National Technology Roadmap for Semiconductors (NTRS) were developed by a fifty-nine member team comprised of industrial (e.g., silicon suppliers, equipment and IC manufacturers) and university personnel. The silicon wafer parameter values as-received by the IC manufacturers are generally derived from model-based analyses based on the technology generation critical dimension (CD), bits, wafer diameter, etc. The values represent the perceived critical material characteristics required to ensure that silicon materials support the continued growth of the IC industry while being cognizant of cost-of-ownership (CoO) considerations. The characteristics were developed via a modular approach of a core set of general characteristics applicable to all product wafers, plus specific recommendations for polished, epitaxial and silicon-on-insulator (SOI) wafers. The formulae utilized, assumptions made and the issues involved, as well as opportunities for improvements in the modeling process, are discussed.
- Materials properties
- Elemental semiconductors
- III-V semiconductors
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Y. K. Semertzidis, M. Aoki, M. Auzinsh, V. Balakin, A. Bazhan, G. W. Bennett, R. M. Carey, P. Cushman, P. T. Debevec, A. Dudnikov, F. J. M. Farley, D. W. Hertzog, M. Iwasaki, K. Jungmann, D. Kawall, B. Khazin, I. B. Khriplovich, B. Kirk, Y. Kuno, D. M. Lazarus, L. B. Leipuner, V. Logashenko, K. R. Lynch, W. J. Marciano, R. McNabb, W. Meng, J. P. Miller, W. M. Morse, C. J. G. Onderwater, Y. F. Orlov, C. S. Ozben, R. Prigl, S. Rescia, B. L. Roberts, N. Shafer‐Ray, A. Silenko, E. J. Stephenson, K. Yoshimura and EDM Collaboration
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