- Conference date: 23-27 March 1998
- Location: Gaithersburg, Maryland (USA)
We compare the results of neutron reflectometry, x-ray reflectometry, and spectroscopic ellipsometry measurements of a thin oxide film (≈10 nm). These methods, which arise from three physically different scattering mechanisms, each determine physical properties of the film, and each has its distinctive strengths. This comparison of the extracted depth profiles of the physical properties gives multiple perspectives on the thickness and interfacial characteristics of an film on Si. This information improves our understanding of the material system and is helpful for refining the models used to analyze similar structures. The extracted thickness of the film is in agreement for these three methods.
- Interfacial properties
- Materials properties
- Materials analysis
- Neutron reflectometry
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