- Conference date: 23-27 March 1998
- Location: Gaithersburg, Maryland (USA)
Silicon carrier concentration profiles were determined by resistivity measurements acquired optically using infrared ellipsometry combined with anodic oxidation sectioning. The method is based upon a technique developed in the early 1960’s, except that the resistivity is measured optically using infrared ellipsometry instead of direct electrical contact to the sample. Infrared ellipsometry is a non-contact optical technique that can simultaneously determine the oxide thickness and the resistivity profile of the underlying substrate (via the free-carrier Drude effect). This eliminates the need for special sample geometries, implanted ohmic contacts, repeated hydrofluoric acid etches and separate measurements of oxide thicknesses. In this study the optical constants of anodic oxides are determined and a carrier profile of an As implanted sample is characterized using infrared ellipsometry.
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