- Conference date: 23-27 March 1998
- Location: Gaithersburg, Maryland (USA)
In the past, resistivity and carrier density profiles derived from spreading resistance measurements have been satisfactorily verified by comparing a doped layer’s measured sheet resistance, with a sheet resistance value calculated from the on-bevel resistivity profile. However, this verification process has been found to fail in the case of ultrashallow (<100 nm) source/drain implants. This paper examines all possible sources of the discrepancy between -measured and -calculated, and concludes that the lack of a sheet resistance edge correction in the standard multilayer SRP analysis is the dominant factor. The paper also discusses the role played by bevel surface damage, on-bevel carrier diffusion, and variations in carrier mobility in high dopant density regions.
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