- Conference date: 23-27 March 1998
- Location: Gaithersburg, Maryland (USA)
This paper reviews recent progress in structural and electronic characterizations of ultrathin thermally grown on Si(100) surfaces. Based on the accurate energy band profile determined for the system, the tunnel current through nanometer thick gate oxides is quantitatively examined by multiple scattering theory. Metrological issues for determining the real oxide thickness in the ultrathin regime are also discussed. It is further shown that nanometer thick gate oxides maintain the sufficient reliability for scaled MOSFETs.
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