Determination of shallow dopants in silicon by low-temperature FTIR spectroscopy
- Conference date: 23-27 March 1998
- Location: Gaithersburg, Maryland (USA)
The shallow dopants B, P, Al, As, and Sb in Si have been investigated by low-temperature Fourier-transform infrared absorption measurements. Experimental procedures are described to obtain quantitative results for the B and P concentration with improved precision. New calibration factors, based on a correlation with four point probe resistivity measurements, are given which can be used in the concentration range from to Preliminary results are reported for Al, As, and Sb.
- Absorption spectroscopy
- Fourier transform infrared spectroscopy
- Silicon doping
- Electrical resistivity
- Infrared spectroscopy
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