- Conference date: 7-8 Aug 1998
- Location: St. Louis, Missouri (USA)
The development of a numerical, postprocessor, device noise simulator, capable of simulating velocity fluctuation and Hooge type 1/f noise is described. Three-dimensional noise maps are presented for a bipolar transistor and MOSFET revealing the noise contributions of specific device areas. Where applicable, good agreement with analytical results is obtained.
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