- Conference date: 23-25 June 1999
- Location: Stuttgart (Germany)
Migration of matter due to various driving forces determines the lifetime of interconnect systems in microelectronics. Recalling the fundamental mechanism behind these failure modes, which is solid state diffusion, a system of models has been set up that yielded in a comprehensive 3-D simulator for migration of matter in interconnect lines, utilizing a commercial FEM package without modifying its code. The simulator has been validated by checking against experimentally backed analytic solutions and has been shown to be an appropriate tool for detailed studies on failure mechanisms in advanced interconnect systems.
- Finite element methods
- Interconnected systems
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