- Conference date: 23-25 June 1999
- Location: Stuttgart (Germany)
Thermally induced stresses are an important reason for voiding failures in interconnects. In this study, thermal stress in copper interconnect lines is investigated with a finite element model. Different from other FEM studies, our model accounts for anisotropic mechanical properties of copper and for different crystallographic orientations of the grains in the copper interconnect line. Thermal stresses simulated this way show that there is a high stress concentration not only at the interconnect/dielectric boundary but also at the grain boundaries. In addition, the different effects of a random grain orientation vs. a strong texture in the interconnect on the stress have been assessed. These simulations are able to explain some of the published experimental data on void nucleation in copper lines.
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