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Sources of excess noise in silicon piezoresistive microphonesa)
a)Portions of this work were presented in “Sources of Excess Noise in Silicon Piezoresistive Microphones” at the 148th Meeting of the Acoustical Society of America, San Diego, CA, November 2004.
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10.1121/1.2188367
/content/asa/journal/jasa/119/5/10.1121/1.2188367
http://aip.metastore.ingenta.com/content/asa/journal/jasa/119/5/10.1121/1.2188367

Figures

Image of FIG. 1.
FIG. 1.

Piezoresistors configured in Wheatstone bridge.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Top view and (b) cross section of a piezoresistive microphone (Ref. 3).

Image of FIG. 3.
FIG. 3.

(a) Lumped element model of a piezoresistive microphone, (b) noise equivalent circuit of a piezoresistive microphone.

Image of FIG. 4.
FIG. 4.

(Color online) Experimental setup of the noise measurement.

Image of FIG. 5.
FIG. 5.

Small signal representation of the setup with a metal film resistor.

Image of FIG. 6.
FIG. 6.

Voltage noise PSD of a metal film resistor without and with the subtraction of the equipment setup noise.

Image of FIG. 7.
FIG. 7.

(Color online) Experimental setup for an ac bridge measurement.

Image of FIG. 8.
FIG. 8.

(a) Power spectral density of UF piezoresistive microphone at zero bias voltage, (b) power spectral density of UF piezoresistive microphone at different bias voltages, (c) power spectral density of UF proximity sensor at different bias voltage (constant reverse bias of ), and (d) power spectral density of Endevco microphone (Model 8510B-1) at different bias voltage.

Image of FIG. 9.
FIG. 9.

Power spectral density of Kulite microphone (MIC-093) at different bias voltage compared to the dc setup noise.

Image of FIG. 10.
FIG. 10.

(a) Power spectral density of the Bruel and Kjaer 4138 condenser microphone and of the UF piezoresistive microphone and (b) coherence function between the B&K 4138 and UF piezoresistive microphone.

Image of FIG. 11.
FIG. 11.

Power spectral densities of noise sources due to the damping resistance, the radiation resistance, and the vent resistance.

Image of FIG. 12.
FIG. 12.

Power spectral densities comparison of total thermomechanical noise to setup noise, electrical thermal noise, and electrical noise.

Image of FIG. 13.
FIG. 13.

(Color online) (a) Power spectral density of the UF piezoresistive proximity sensor with free diaphragm and (b) power spectral density of the UF piezoresistive proximity sensor with fixed diaphragm.

Tables

Generic image for table
TABLE I.

Lumped element parameters of piezoresistive microphone (Ref. 26) computed for UF microphone (Ref. 3).

Generic image for table
TABLE II.

Measured input and output impedances and overall sensitivity of UF1 piezoresistive microphone, UF2 piezoresistive proximity sensor, and Kulite and Endevco piezoresistive microphones.

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/content/asa/journal/jasa/119/5/10.1121/1.2188367
2006-05-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Sources of excess noise in silicon piezoresistive microphonesa)
http://aip.metastore.ingenta.com/content/asa/journal/jasa/119/5/10.1121/1.2188367
10.1121/1.2188367
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