Central masking with bilateral cochlear implants
Complete set of central masking data measured for the seven bilateral CI subjects (n = 7), sorted into panels according to the location of the fixed probe electrode (black contact) in the left ear (A), or the right ear (B). Electric masking patterns are represented as the threshold elevation of the probe electrode (%DR) as a function of contralateral masking electrodes. Thin lines show individual data and the thick lines show the mean data for each fixed probe electrode location.
(A) Average electric masking patterns of both ears combined (n = 14). Error bars indicate one standard error of the mean. (B) Electric masking patterns with split averages for when the first or second sequentially implanted CI represented the probe.
Threshold elevation as a function of the masker-probe electrode separation across ears (n = 14). Exponential equations were calculated to characterize masking growth.
(A) Compares the average electric masking patterns of the original condition with the reduced masker intensity condition (n = 6). (B) Compares the average electric masking patterns of the original condition with the concurrent onset/offset condition.
Average electric masking patterns represented as the threshold elevation of pure tones (dB) as a function of contralateral masking electrodes for subject UL1 (n = 1).
Subject's age at testing, duration of CI use, inter-implant interval, bilateral CI usage, first CI type, second CI type, side of first CI, age at hearing loss.
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