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Calculation of the Schottky barrier height at the Al/GaAs(001) heterojunction: Effect of interfacial atomic relaxations
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10.1116/1.578316
/content/avs/journal/jvsta/11/4/10.1116/1.578316
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/11/4/10.1116/1.578316
/content/avs/journal/jvsta/11/4/10.1116/1.578316
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/content/avs/journal/jvsta/11/4/10.1116/1.578316
1993-07-01
2014-07-10
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Calculation of the Schottky barrier height at the Al/GaAs(001) heterojunction: Effect of interfacial atomic relaxations
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/11/4/10.1116/1.578316
10.1116/1.578316
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