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Etching rate characterization of SiO2 and Si using ion energy flux and atomic fluorine density in a CF4/O2/Ar electron cyclotron resonance plasma
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10.1116/1.578540
/content/avs/journal/jvsta/11/4/10.1116/1.578540
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/11/4/10.1116/1.578540
/content/avs/journal/jvsta/11/4/10.1116/1.578540
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/content/avs/journal/jvsta/11/4/10.1116/1.578540
1993-07-01
2014-07-12
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Etching rate characterization of SiO2 and Si using ion energy flux and atomic fluorine density in a CF4/O2/Ar electron cyclotron resonance plasma
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/11/4/10.1116/1.578540
10.1116/1.578540
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