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Growth and characterization of Si1−x Ge x /Si multilayers on patterned Si(001) substrates using gas source molecular beam epitaxy
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10.1116/1.579180
/content/avs/journal/jvsta/12/4/10.1116/1.579180
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/12/4/10.1116/1.579180
/content/avs/journal/jvsta/12/4/10.1116/1.579180
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/content/avs/journal/jvsta/12/4/10.1116/1.579180
1994-07-01
2014-08-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth and characterization of Si1−xGex/Si multilayers on patterned Si(001) substrates using gas source molecular beam epitaxy
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/12/4/10.1116/1.579180
10.1116/1.579180
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