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Molecular beam epitaxy growth of thin films of SnS2 and SnSe2 on cleaved mica and the basal planes of single‐crystal layered semiconductors: Reflection high‐energy electron diffraction, low‐energy electron diffraction, photoemission, and scanning tunneling microscopy/atomic force microscopy characterization
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10.1116/1.579766
/content/avs/journal/jvsta/13/3/10.1116/1.579766
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/13/3/10.1116/1.579766
/content/avs/journal/jvsta/13/3/10.1116/1.579766
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/content/avs/journal/jvsta/13/3/10.1116/1.579766
1995-05-01
2015-07-05
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular beam epitaxy growth of thin films of SnS2 and SnSe2 on cleaved mica and the basal planes of single‐crystal layered semiconductors: Reflection high‐energy electron diffraction, low‐energy electron diffraction, photoemission, and scanning tunneling microscopy/atomic force microscopy characterization
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/13/3/10.1116/1.579766
10.1116/1.579766
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