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Scanning tunneling microscopy studies of strain relaxation and misfit dislocations in InAs layers grown on GaAs(110) and GaAs(111)A
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10.1116/1.580732
/content/avs/journal/jvsta/15/3/10.1116/1.580732
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/15/3/10.1116/1.580732
/content/avs/journal/jvsta/15/3/10.1116/1.580732
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/content/avs/journal/jvsta/15/3/10.1116/1.580732
1997-05-01
2014-09-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Scanning tunneling microscopy studies of strain relaxation and misfit dislocations in InAs layers grown on GaAs(110) and GaAs(111)A
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/15/3/10.1116/1.580732
10.1116/1.580732
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