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Growth kinetics of GaN and effects of flux ratio on the properties of GaN films grown by plasma-assisted molecular beam epitaxy
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10.1116/1.581975
/content/avs/journal/jvsta/17/5/10.1116/1.581975
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/17/5/10.1116/1.581975
/content/avs/journal/jvsta/17/5/10.1116/1.581975
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/content/avs/journal/jvsta/17/5/10.1116/1.581975
1999-09-01
2014-09-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth kinetics of GaN and effects of flux ratio on the properties of GaN films grown by plasma-assisted molecular beam epitaxy
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/17/5/10.1116/1.581975
10.1116/1.581975
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