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Two-dimensional gain profiles of InP/InGaAs separate absorption, grading, charge, and multiplication avalanche photodiodes modeled by a simplified stochastic approach
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10.1116/1.582236
/content/avs/journal/jvsta/18/2/10.1116/1.582236
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/18/2/10.1116/1.582236
/content/avs/journal/jvsta/18/2/10.1116/1.582236
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/content/avs/journal/jvsta/18/2/10.1116/1.582236
2000-03-01
2015-03-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Two-dimensional gain profiles of InP/InGaAs separate absorption, grading, charge, and multiplication avalanche photodiodes modeled by a simplified stochastic approach
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/18/2/10.1116/1.582236
10.1116/1.582236
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