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Titanium oxide films on Si(100) deposited by electron-beam evaporation at 250 °C
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10.1116/1.582275
/content/avs/journal/jvsta/18/3/10.1116/1.582275
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/18/3/10.1116/1.582275
/content/avs/journal/jvsta/18/3/10.1116/1.582275
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/content/avs/journal/jvsta/18/3/10.1116/1.582275
2000-05-01
2014-09-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Titanium oxide films on Si(100) deposited by electron-beam evaporation at 250 °C
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/18/3/10.1116/1.582275
10.1116/1.582275
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