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Crystallization of nanostructured silicon films deposited under a low-pressure argon–silane pulsed-glow discharge: Correlation with the plasma duration
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10.1116/1.1335836
/content/avs/journal/jvsta/19/1/10.1116/1.1335836
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/19/1/10.1116/1.1335836
/content/avs/journal/jvsta/19/1/10.1116/1.1335836
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/content/avs/journal/jvsta/19/1/10.1116/1.1335836
2001-01-01
2015-04-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Crystallization of nanostructured silicon films deposited under a low-pressure argon–silane pulsed-glow discharge: Correlation with the plasma duration
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/19/1/10.1116/1.1335836
10.1116/1.1335836
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