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Morphology and electronic transport of polycrystalline silicon films deposited by at a substrate temperature of 200 °C
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10.1116/1.1469008
/content/avs/journal/jvsta/20/3/10.1116/1.1469008
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/20/3/10.1116/1.1469008
/content/avs/journal/jvsta/20/3/10.1116/1.1469008
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/content/avs/journal/jvsta/20/3/10.1116/1.1469008
2002-05-07
2014-10-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Morphology and electronic transport of polycrystalline silicon films deposited by SiF4/H2 at a substrate temperature of 200 °C
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/20/3/10.1116/1.1469008
10.1116/1.1469008
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