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Effect of thermal annealing on the electronic properties of nitrogen doped amorphous carbon/p-type crystalline silicon heterojunction diodes
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10.1116/1.1562477
/content/avs/journal/jvsta/21/3/10.1116/1.1562477
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/21/3/10.1116/1.1562477
/content/avs/journal/jvsta/21/3/10.1116/1.1562477
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/content/avs/journal/jvsta/21/3/10.1116/1.1562477
2003-03-28
2014-07-10
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of thermal annealing on the electronic properties of nitrogen doped amorphous carbon/p-type crystalline silicon heterojunction diodes
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/21/3/10.1116/1.1562477
10.1116/1.1562477
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