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Pulsed laser ultrahigh vacuum deposited silicon in the presence of excess cesium and oxygen studied with x-ray photoelectron spectroscopy and atomic force microscopy
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10.1116/1.1577137
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    Affiliations:
    1 Department of Human Communication, The University of Electro-Communications, 1-5-1 Chofugaoka Chofu, Tokyo 182-8585, Japan
    2 New Display Device Division, Home Network Company, Sony Corporation, 6-7-35, Kitashinagawa, Shinagawa-ku, Tokyo 141-0001, Japan
    3 Nanosilicon Research Group, Material Research Laboratory, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
    4 Electron-beam Device Business Department, Display Device Company, Home Network Company, Sony Corporation, 4-16-1 Okada, Atsugi, Kanagawa 243-0021, Japan
    J. Vac. Sci. Technol. A 21, 874 (2003); http://dx.doi.org/10.1116/1.1577137
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/content/avs/journal/jvsta/21/4/10.1116/1.1577137
2003-05-12
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Pulsed laser ultrahigh vacuum deposited silicon in the presence of excess cesium and oxygen studied with x-ray photoelectron spectroscopy and atomic force microscopy
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/21/4/10.1116/1.1577137
10.1116/1.1577137
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