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Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma
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10.1116/1.1705590
/content/avs/journal/jvsta/22/4/10.1116/1.1705590
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/22/4/10.1116/1.1705590
/content/avs/journal/jvsta/22/4/10.1116/1.1705590
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/content/avs/journal/jvsta/22/4/10.1116/1.1705590
2004-07-20
2014-11-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/22/4/10.1116/1.1705590
10.1116/1.1705590
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