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Etching yield of irradiated by ion with energies from 250 to 2000 eV
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10.1116/1.1761119
/content/avs/journal/jvsta/22/4/10.1116/1.1761119
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/22/4/10.1116/1.1761119
/content/avs/journal/jvsta/22/4/10.1116/1.1761119
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/content/avs/journal/jvsta/22/4/10.1116/1.1761119
2004-06-17
2014-08-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Etching yield of SiO2 irradiated by F+,CFx+(x=1,2,3) ion with energies from 250 to 2000 eV
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/22/4/10.1116/1.1761119
10.1116/1.1761119
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