Etching mechanism of thin films in inductively coupled plasma
Etch rates of and PR as functions of mixing ratio. The etching conditions are , , , and .
Electron density and electron temperature as functions of mixing ratio.
(a) dissociation rate and atom density estimated from zero-dimensional plasma model. (b) Partial densities of positive ions estimated from zero-dimensional plasma model.
Partial etch rates of ion-assisted chemical reaction and physical sputtering as a function of the mixing ratio as predicted by the model of surface kinetics. The modeling parameters are , , .
Comparison of etching rates determined by experiment and modeling. Modeling parameters are the same with Fig. 4.
Reaction set for simulation of volume kinetics in plasma.
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