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Etching mechanism of thin films in inductively coupled plasma
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10.1116/1.1772370
/content/avs/journal/jvsta/22/5/10.1116/1.1772370
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/22/5/10.1116/1.1772370

Figures

Image of FIG. 1.
FIG. 1.

Etch rates of and PR as functions of mixing ratio. The etching conditions are , , , and .

Image of FIG. 2.
FIG. 2.

Electron density and electron temperature as functions of mixing ratio.

Image of FIG. 3.
FIG. 3.

(a) dissociation rate and atom density estimated from zero-dimensional plasma model. (b) Partial densities of positive ions estimated from zero-dimensional plasma model.

Image of FIG. 4.
FIG. 4.

Partial etch rates of ion-assisted chemical reaction and physical sputtering as a function of the mixing ratio as predicted by the model of surface kinetics. The modeling parameters are , , .

Image of FIG. 5.
FIG. 5.

Comparison of etching rates determined by experiment and modeling. Modeling parameters are the same with Fig. 4.

Tables

Generic image for table
TABLE I.

Reaction set for simulation of volume kinetics in plasma.

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/content/avs/journal/jvsta/22/5/10.1116/1.1772370
2004-09-24
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Etching mechanism of MgO thin films in inductively coupled Cl2∕Ar plasma
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/22/5/10.1116/1.1772370
10.1116/1.1772370
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