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Ion effects on surface interactions during and plasma processing of a)
a)No proof corrections received from author prior to publication.
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Image of FIG. 1.
FIG. 1.

Experimental fluorescence excitation spectrum of in the molecular beam formed from a plasma. The transition used for all density and reactivity measurements was the vibronic band of the transition.

Image of FIG. 2.
FIG. 2.

Relative LIF intensities of radicals in (circles) and plasmas (triangles) as a function of (a) applied rf power and (b) pressure. Open symbols indicate data taken with a grounded mesh (g.m.) in the path of the molecular beam.

Image of FIG. 3.
FIG. 3.

Spatially resolved 2D ICCD images of the LIF signal for the state (a) in the molecular beam and (b) with a substrate rotated into the path of the molecular beam (laser–surface distance ). The image in (c) is the difference between (a) and (b) and shows only the molecules scattering from the surface. LIF signals with the highest intensity appear as the darkest regions, and lines indicate the location of the molecular and laser beams. All images are on the same intensity scale.

Image of FIG. 4.
FIG. 4.

Cross sections of the LIF images shown in Figs. 3(a) and 3(c) (solid lines). Dashed lines represent the simulation results for with a laser–surface distance of .

Image of FIG. 5.
FIG. 5.

Scatter coefficients for during (a) and (b) plasma processing of . Open symbols represent measurements taken with a grounded mesh in the path of the molecular beam. Values are the averages of multiple data sets taken over a two year time period.

Image of FIG. 6.
FIG. 6.

Plasma-ion mass spectra of ions from (a) a plasma molecular beam, and (b) a plasma molecular beam under normal (solid line) and ion-limited conditions (dashed line). Data are normalized to the most intense ion in the spectrum taken without a grounded mesh in the path of the molecular beam.

Image of FIG. 7.
FIG. 7.

High resolution XPS spectra of materials deposited on wafers in the IRIS chamber from (a) and (b) plasmas.

Image of FIG. 8.
FIG. 8.

Relationship between and % crosslinking in materials deposited during and plasma processing. Data shown are for films deposited 8 cm downstream from the coil in independent plasma reactors: plasmas and plasmas, data for films deposited on IRIS substrates are also shown . The line is a linear regression fit to all of the data. Note that for some data points, the horizontal error bars are smaller than the symbol size.


Generic image for table

scatter coefficients for FC processing of .a,b

Generic image for table

Composition of fluorocarbon materials deposited on IRIS substrates.a


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ion effects on CF2 surface interactions during C3F8 and C4F8 plasma processing of Sia)