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Micro-Auger electron spectroscopy studies of chemical and electronic effects at GaN-sapphire interfaces
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10.1116/1.1795820
/content/avs/journal/jvsta/22/6/10.1116/1.1795820
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/22/6/10.1116/1.1795820
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) GaN/sapphire Auger images in cross section illustrating relatively sharp boundaries between GaN and for each of the near interface elements of sample A.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Local segments and averaged Auger line profiles for O, N, Al and Ga concentrations corresponding to the interface in Fig. 1

Image of FIG. 3.
FIG. 3.

(Color online) GaN/sapphire Auger images in cross section illustrating relatively diffuse boundaries between GaN and for each of the near interface elements of sample B.

Image of FIG. 4.
FIG. 4.

(Color online) Averaged Auger line profiles for O, N, Al and Ga concentrations corresponding to the interface in Fig. 3.

Image of FIG. 5.
FIG. 5.

(Color online) SIMS line profiles for O, Al, , , and fragments.

Image of FIG. 6.
FIG. 6.

(Color online) Room temperature cross-sectional CL spectra vs distance from the interface in sample B.

Image of FIG. 7.
FIG. 7.

(Color online) (a) Sample B SEM cross-sectional image of the interface. Individual AES spectra at (b) high and (c) low energy are numbered to correspond with real space positions shown in (a).

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/content/avs/journal/jvsta/22/6/10.1116/1.1795820
2004-10-20
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Micro-Auger electron spectroscopy studies of chemical and electronic effects at GaN-sapphire interfaces
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/22/6/10.1116/1.1795820
10.1116/1.1795820
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