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Near-infrared diode laser hydrogen fluoride monitor for dielectric etch
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10.1116/1.1809124
/content/avs/journal/jvsta/22/6/10.1116/1.1809124
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/22/6/10.1116/1.1809124

Figures

Image of FIG. 1.
FIG. 1.

HF first overtone spectra simulation.

Image of FIG. 2.
FIG. 2.

HF peak absorbance vs temperature.

Image of FIG. 3.
FIG. 3.

Stanford experimental setup.

Image of FIG. 4.
FIG. 4.

Etch plasma schematic.

Image of FIG. 5.
FIG. 5.

Wavelength modulation setup.

Image of FIG. 6.
FIG. 6.

Wavelength modulation calibration.

Image of FIG. 7.
FIG. 7.

HF direct absorption lineshape at with pathlength, HF partial pressure.

Image of FIG. 8.
FIG. 8.

(a) Direct absorption for PR etch (no added). (b) Direct absorption for PR etch ( added).

Image of FIG. 9.
FIG. 9.

(a) PR blanket wafer post-etch analysis. (The major divisions in the time axis are ). (b) Direct absorption line shape at etch time 1. (c) Direct absorption line shape at etch time 2.

Image of FIG. 10.
FIG. 10.

(a) SiOCH film post-etch analysis. (b) Direct absorption line shape at etch time . (c) Direct absorption line shape at etch time .

Image of FIG. 11.
FIG. 11.

Patterned wafer structure.

Image of FIG. 12.
FIG. 12.

Anticipated qualitative HF sensor trace.

Image of FIG. 13.
FIG. 13.

signal trace during etching a patterned wafer.

Image of FIG. 14.
FIG. 14.

(a) Pre-etch. (b) At etch time . (c) At etch time . (d) At etch time .

Tables

Generic image for table
TABLE I.

Etch process analysis.

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/content/avs/journal/jvsta/22/6/10.1116/1.1809124
2004-11-01
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Near-infrared diode laser hydrogen fluoride monitor for dielectric etch
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/22/6/10.1116/1.1809124
10.1116/1.1809124
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