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Growth of heteroepitaxial ZnO thin film and nanomultilayer by off-axis rf magnetron sputtering
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10.1116/1.1814105
    + View Affiliations - Hide Affiliations
    Affiliations:
    1 Thin Film Materials Research Center, Korea Institute of Science and Technology, 39-1 Hawolgok-dong, Seongbuk-gu, Seoul 136-791, Korea
    2 Department of Optical Engineering, Inje University, Kyongnam 621-749, Korea
    3 Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
    4 Department of Optical Engineering, Inje University, Kyongnam 621-749, Korea
    5 Thin Film Materials Research Center, Korea Institute of Science and Technology, 39-1 Hawolgok-dong, Seongbuk-gu, Seoul 136-791, Korea
    a) Also at: Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea.
    b) Author to whom correspondence should be addressed; electronic mail: jkleemc@kist.re.kr
    J. Vac. Sci. Technol. A 23, 1 (2005); http://dx.doi.org/10.1116/1.1814105
/content/avs/journal/jvsta/23/1/10.1116/1.1814105
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/23/1/10.1116/1.1814105

Figures

Image of FIG. 1.
FIG. 1.

Effect of deposition pressure on HRXRD rocking curve FWHM of ZnO thin film on sapphire (001) substrate grown at and (inset; substrate temperature of ).

Image of FIG. 2.
FIG. 2.

FE-SEM surface morphology of heteroepitaxial ZnO thin films grown at and ; (a) 5, (b) 10, (c) 20, and (d) (inset; cross section).

Image of FIG. 3.
FIG. 3.

AFM surface morphology of thick ZnO thin film on sapphire grown at , , and .

Image of FIG. 4.
FIG. 4.

HRXRD phi-scan of heteroepitaxial ZnO thin film on sapphire (001) substrate grown at , , and .

Image of FIG. 5.
FIG. 5.

PL spectra of as-deposited ZnO thin film on sapphire grown at , , and ; Measuring temperature of (a) and (b) RT.

Image of FIG. 6.
FIG. 6.

Effect of postannealing temperature on the HRXRD rocking curve FWHM of ZnO thin film grown at , , and .

Image of FIG. 7.
FIG. 7.

Low-temperature PL spectra of nanomultilayer with well layer thickness of (a) 120 and (b) , and (c) thin film (All layers were grown at , , and ) (inset: Plot of the peak energy of (Mg,Zn)O against Mg content—see Ref. 19).

Tables

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TABLE I.

Sputtering conditions.

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2004-11-15
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of heteroepitaxial ZnO thin film and ZnO∕(Mg,Zn)O nanomultilayer by off-axis rf magnetron sputtering
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/23/1/10.1116/1.1814105
10.1116/1.1814105
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