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Etching mechanisms of and in inductively coupled fluorocarbon plasmas: Correlation between plasma species and surface etching
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10.1116/1.1851541
/content/avs/journal/jvsta/23/2/10.1116/1.1851541
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/23/2/10.1116/1.1851541

Figures

Image of FIG. 1.
FIG. 1.

Etch rates of oxide vs bias voltage for two mixtures [(a) and (b) ] and three residence times (75, 190, and ).

Image of FIG. 2.
FIG. 2.

Etch rate of silicon vs bias voltage for two mixtures [(a) and (b) ] and three residence times (75, 190, and ).

Image of FIG. 3.
FIG. 3.

Silicon etch rate vs the fluorocarbon layer thickness over the silicon surface for two different gas mixtures— and (, , , ).

Image of FIG. 4.
FIG. 4.

Silicon etch rate vs the atomic fluorine concentration in the plasma for two different gas mixtures— and (, , , ).

Image of FIG. 5.
FIG. 5.

Silicon etch rate vs the atomic fluorine concentration for different gas mixtures, residence times, and bias voltage (5 and , , ). The lines link the experimental points for which the fluorocarbon layer thickness over silicon is identical.

Image of FIG. 6.
FIG. 6.

Deposition rate of fluorocarbon films measured for pure and a gas mixture when varying the residence time without biasing the substrate (, ).

Image of FIG. 7.
FIG. 7.

Etch rate of fluorocarbon films vs residence time for pure and a gas mixture (, , ).

Image of FIG. 8.
FIG. 8.

Fluorocarbon film etch rate vs the atomic fluorine concentration for different gas mixtures (, , ).

Image of FIG. 9.
FIG. 9.

ratio and film thickness as a function of the percentage of methane or in (, , , ).

Image of FIG. 10.
FIG. 10.

ratio and film thickness as a function of the residence time for and plasmas (, , ).

Image of FIG. 11.
FIG. 11.

Etching yield of (atoms/ions) as a function of the thickness of the fluorocarbon layer determined by XPS assuming a homogeneous layer on bulk oxide (different gas mixtures, 5 and , , , ).

Image of FIG. 12.
FIG. 12.

Etching yield of as a function of the ratio determined from the ion composition (different gas mixtures, 5 and , , , ).

Tables

Generic image for table
TABLE I.

ratio calculated from the radical density and ratio calculated from the ion population as a function of the gas mixture and the residence time (, ).

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/content/avs/journal/jvsta/23/2/10.1116/1.1851541
2005-01-18
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Etching mechanisms of Si and SiO2 in inductively coupled fluorocarbon plasmas: Correlation between plasma species and surface etching
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/23/2/10.1116/1.1851541
10.1116/1.1851541
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