General GCIB apparatus schematic.
Typical size distribution of Ar cluster ion beam analyzed by time-of-flight method.
Milestones of the gas cluster ion-beam equipment development.
MD simulation of B and cluster impact in crystalline Si at acceleration energy.
Cluster size dependence of and after Ar-GCIB irradiation with an ion dose of .
Cluster size dependence of the number of displaced Si from MD simulations and the sum of oxide and amorphous layer thickness measured with an ellipsometer.
Angular distribution of sputtered atoms by Ar monomer and Ar cluster ions. (a) Normal incidence and (b) oblique incidence.
Comparison of sputtering yields by monomer and cluster ions.
Calculated temperature and pressure at after the impact of clusters on a Si substrate.
SIMS analysis of implanted B concentration after implantation of at 5, 3, and before and after annealing for by rapid thermal annealing.
B concentrations in the Si infused by GCIB using in Ar at a cluster ion dose of .
Relationship of junction depth measured at versus infusion doping energy over the energy range of .
Ion dose dependence of the average roughness of a CVD diamond surface bombarded with a Ar cluster ion beam at normal incidence.
Thinning and uniformity improvement of Si layer on SOI wafer by location-specific GCIB processing.
AFM image of a SiC surface before (left) and after (right) triple-energy, dual-species GCIB, showing high frequency surface roughness reduction. (pre-GCIB: , , ; post-GCIB: , . ).
TEM/EELS of TiSiN deposition on GCIB treated -MSQ (left) and untreated -MSQ (right). The untreated sample shows Ti penetration, whereas the GCIB-treated sample shows no Ti penetration. Note scale differences.
Densified layer thickness as a function of GCIB acceleration voltage.
SEM cross-sectional image of multilayer film and AFM images at the interfaces between layers.
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