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Current research and development topics on gas cluster ion-beam processes
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10.1116/1.1894419
/content/avs/journal/jvsta/23/4/10.1116/1.1894419
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/23/4/10.1116/1.1894419
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

General GCIB apparatus schematic.

Image of FIG. 2.
FIG. 2.

Typical size distribution of Ar cluster ion beam analyzed by time-of-flight method.

Image of FIG. 3.
FIG. 3.

Milestones of the gas cluster ion-beam equipment development.

Image of FIG. 4.
FIG. 4.

MD simulation of B and cluster impact in crystalline Si at acceleration energy.

Image of FIG. 5.
FIG. 5.

Cluster size dependence of and after Ar-GCIB irradiation with an ion dose of .

Image of FIG. 6.
FIG. 6.

Cluster size dependence of the number of displaced Si from MD simulations and the sum of oxide and amorphous layer thickness measured with an ellipsometer.

Image of FIG. 7.
FIG. 7.

Angular distribution of sputtered atoms by Ar monomer and Ar cluster ions. (a) Normal incidence and (b) oblique incidence.

Image of FIG. 8.
FIG. 8.

Comparison of sputtering yields by monomer and cluster ions.

Image of FIG. 9.
FIG. 9.

Calculated temperature and pressure at after the impact of clusters on a Si substrate.

Image of FIG. 10.
FIG. 10.

SIMS analysis of implanted B concentration after implantation of at 5, 3, and before and after annealing for by rapid thermal annealing.

Image of FIG. 11.
FIG. 11.

B concentrations in the Si infused by GCIB using in Ar at a cluster ion dose of .

Image of FIG. 12.
FIG. 12.

Relationship of junction depth measured at versus infusion doping energy over the energy range of .

Image of FIG. 13.
FIG. 13.

Ion dose dependence of the average roughness of a CVD diamond surface bombarded with a Ar cluster ion beam at normal incidence.

Image of FIG. 14.
FIG. 14.

Thinning and uniformity improvement of Si layer on SOI wafer by location-specific GCIB processing.

Image of FIG. 15.
FIG. 15.

AFM image of a SiC surface before (left) and after (right) triple-energy, dual-species GCIB, showing high frequency surface roughness reduction. (pre-GCIB: , , ; post-GCIB: , . ).

Image of FIG. 16.
FIG. 16.

TEM/EELS of TiSiN deposition on GCIB treated -MSQ (left) and untreated -MSQ (right). The untreated sample shows Ti penetration, whereas the GCIB-treated sample shows no Ti penetration. Note scale differences.

Image of FIG. 17.
FIG. 17.

Densified layer thickness as a function of GCIB acceleration voltage.

Image of FIG. 18.
FIG. 18.

SEM cross-sectional image of multilayer film and AFM images at the interfaces between layers.

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/content/avs/journal/jvsta/23/4/10.1116/1.1894419
2005-06-28
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Current research and development topics on gas cluster ion-beam processes
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/23/4/10.1116/1.1894419
10.1116/1.1894419
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