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Structural, electrical, and optical properties of transparent conductive films
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10.1116/1.1894421
/content/avs/journal/jvsta/23/4/10.1116/1.1894421
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/23/4/10.1116/1.1894421
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Resistivities, Hall mobilities and carrier densities of (a) the as-deposited films, the postannealed films (b) in air, (c) in Ar (100%) and (d) in for 1 h at 200 °C as a function of during sputtering depositions.

Image of FIG. 2.
FIG. 2.

XRD profiles of the films deposited at the optimum using the ceramic targets containing from 0 to 100 wt. %. (a) The as-deposited films and the postannealed films (b) in air, (c) in Ar (100%) and (d) in for 1 h at 200 °C.

Image of FIG. 3.
FIG. 3.

(a) Resistivity, (b) mobility, and (c) carrier density of the films postannealed in the three different atmospheres at the optimum , as a function of concentration of the targets. The square markers represent the 200 °C, 1 h air annealing; the triangle markers represent the 200 °C, 1 h Ar (100%) annealing; the reverse triangle markers represent the 200 °C 1 h annealing. The values for as-deposited films were also shown for comparison (open circles).

Image of FIG. 4.
FIG. 4.

Optical properties of (a) the as-deposited and the postannealed films (b) in air, (c) in Ar (100%) and (d) in for 1 h at 200 °C.

Image of FIG. 5.
FIG. 5.

Cubic root of photoelectron emission intensity curves as a function of irradiated photon energy on the film surface analyzed by PESA for the films of 0–100 wt. % postannealed in air for 1 h at 200 °C.

Image of FIG. 6.
FIG. 6.

Work functions of the films as a function of the concentration in the targets. The square markers represent the 200 °C, 1 h air annealing; the triangle markers represent the 200 °C, 1 h Ar (100%) annealing; the reverse triangle markers represent the 200 °C, 1 h annealing. The values for as-deposited films were also shown for comparison (open circles).

Image of FIG. 7.
FIG. 7.

Relationship between work function and two-thirds the power of carrier density for the films with 0–20 wt. % . The square markers represent the 200 °C, 1 h air annealing; the triangle markers represent the 200 °C, 1 h Ar (100%) annealing; the reverse triangle markers represent the 200 °C, 1 h annealing.

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/content/avs/journal/jvsta/23/4/10.1116/1.1894421
2005-06-28
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural, electrical, and optical properties of transparent conductive In2O3–SnO2 films
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/23/4/10.1116/1.1894421
10.1116/1.1894421
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