XRD patterns of BST:Er thin films annealed at various temperatures (a) and doped with various Er concentrations at sintering temperature (b). Secondary phases are marked by various symbols.
Raman spectra of BST thin films annealed at temperature (a) and typical expanded XRD data around 45.5° (b). An extra peak comes from the laser source and is denoted by . The dotted and solid lines represent the experimental and fitting results, respectively.
Refractive index of BST:Er thin films annealed at with various concentrations.
Room temperature photoluminescence spectra of BST thin films doped with Er under various annealing temperatures. Appropriate offset has been made to highlight the variations in the line shapes of PL spectra.
(a) Excitation-dependent photoluminescence spectra of BST:Er thin film. The arrow indicates the direction of adding excitation power. (b) Integrated intensities of green emission vs the excitation power.
Integrated green emission intensities of BST:Er thin films as a function of Er concentration and annealing temperatures.
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