XRD patterns of films grown at various temperatures.
(a) Resistance switching in film grown at RT and (b) SET∕RESET voltages in films as a function of growth temperature. (The size of top electrode is .)
Ni spectra of films grown at 400 °C and RT. [Dashed lines indicate the peak position of various Ni bond states Ref. 15.]
(a) RBS spectrum of film grown at RT and (b) The atomic ratio of nickel to oxygen as a function of growth temperature.
(a) Variation of ON-state behavior of film grown at RT under different magnitudes of compliance SET current and (b) the relationship between the compliance SET current and the ON-state voltage and current. (The thickness of nickel oxide film is about 400 nm and the size of top electrode is 120 μm diameter.)
Spacing between planes, , as a function of growth temperature.
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