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Reproducible resistive switching in nonstoichiometric nickel oxide films grown by rf reactive sputtering for resistive random access memory applications
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10.1116/1.1953687
/content/avs/journal/jvsta/23/5/10.1116/1.1953687
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/23/5/10.1116/1.1953687

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of films grown at various temperatures.

Image of FIG. 2.
FIG. 2.

(a) Resistance switching in film grown at RT and (b) SET∕RESET voltages in films as a function of growth temperature. (The size of top electrode is .)

Image of FIG. 3.
FIG. 3.

Ni spectra of films grown at 400 °C and RT. [Dashed lines indicate the peak position of various Ni bond states Ref. 15.]

Image of FIG. 4.
FIG. 4.

(a) RBS spectrum of film grown at RT and (b) The atomic ratio of nickel to oxygen as a function of growth temperature.

Image of FIG. 5.
FIG. 5.

(a) Variation of ON-state behavior of film grown at RT under different magnitudes of compliance SET current and (b) the relationship between the compliance SET current and the ON-state voltage and current. (The thickness of nickel oxide film is about 400 nm and the size of top electrode is 120 μm diameter.)

Tables

Generic image for table
TABLE I.

Deposition conditions.

Generic image for table
TABLE II.

Spacing between planes, , as a function of growth temperature.

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/content/avs/journal/jvsta/23/5/10.1116/1.1953687
2005-07-22
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reproducible resistive switching in nonstoichiometric nickel oxide films grown by rf reactive sputtering for resistive random access memory applications
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/23/5/10.1116/1.1953687
10.1116/1.1953687
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