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Improvement of nitrogen retained dose using ammonia as a precursor in nitrogen plasma immersion ion implantation of silicon
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10.1116/1.1991870
/content/avs/journal/jvsta/23/5/10.1116/1.1991870
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/23/5/10.1116/1.1991870

Figures

Image of FIG. 1.
FIG. 1.

FTIR absorbance spectra of the samples.

Image of FIG. 2.
FIG. 2.

Si , N , and O photoelectron spectra acquired from the four samples.

Image of FIG. 3.
FIG. 3.

Water contact angles of the samples measured by contact angle testing.

Image of FIG. 4.
FIG. 4.

Raman spectra acquired from nitrogen and ammonia∕nitrogen implanted silicon.

Tables

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TABLE I.

PIII instrumental parameters.

Generic image for table
TABLE II.

Compositions of the plasma-implanted silicon wafers as determined by XPS.

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/content/avs/journal/jvsta/23/5/10.1116/1.1991870
2005-07-22
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvement of nitrogen retained dose using ammonia as a precursor in nitrogen plasma immersion ion implantation of silicon
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/23/5/10.1116/1.1991870
10.1116/1.1991870
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