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Properties of transparent conductive :Mo thin films deposited by Channel Spark Ablation
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10.1116/1.1991871
/content/avs/journal/jvsta/23/5/10.1116/1.1991871
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/23/5/10.1116/1.1991871
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of CSA apparatus.

Image of FIG. 2.
FIG. 2.

XRD pattern of IMO film deposited at and . The inset is a normalized standard XRD pattern of from JCPDS file No. 76-0152 for comparison.

Image of FIG. 3.
FIG. 3.

morphology image of typical IMO film taken by AFM at atomic force of 2 nN.

Image of FIG. 4.
FIG. 4.

Transmission spectra of IMO thin films with glass substrates deposited at in the wavelength range of 200–900 nm.

Image of FIG. 5.
FIG. 5.

Resistivity and the carrier concentration of thin films as a function of oxygen pressure at substrate temperature .

Image of FIG. 6.
FIG. 6.

UPS He I spectrum of IMO thin film. Ni is used as the reference of Fermi level.

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/content/avs/journal/jvsta/23/5/10.1116/1.1991871
2005-07-22
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Properties of transparent conductive In2O3:Mo thin films deposited by Channel Spark Ablation
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/23/5/10.1116/1.1991871
10.1116/1.1991871
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