1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Reactive magnetron sputtering of hard Si–B–C–N films with a high-temperature oxidation resistance
Rent:
Rent this article for
USD
10.1116/1.2049298
/content/avs/journal/jvsta/23/6/10.1116/1.2049298
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/23/6/10.1116/1.2049298
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of the rectangular graphite target with symmetrically mounted silicon and boron stripes.

Image of FIG. 2.
FIG. 2.

Deposition rate and respective dc and rf power levels, and , absorbed in the plasma (a), and ion-to-film-forming particles flux-ratio, , and ion energy per deposited atom, (b) for films prepared in a gas mixture at various silicon fractions in the target erosion area for and (full symbols), and and (empty symbols).

Image of FIG. 3.
FIG. 3.

Elemental composition of films prepared in a gas mixture at various silicon fractions in the target erosion area for and (full symbols), and and (empty symbols).

Image of FIG. 4.
FIG. 4.

High-resolution photoelectron Si (a), B (b), C (c), and N (d) spectra of films prepared in a gas mixture at various silicon fractions in the target erosion area for and (full symbols), and and (empty symbols).

Image of FIG. 5.
FIG. 5.

Hardness measured with the presented maximum load (a), and effective Young’s modulus, , and elastic recovery measured with a maximum load of (b) for films prepared in a gas mixture at various silicon fractions in the target erosion area for and (full symbols), and and (empty symbols).

Image of FIG. 6.
FIG. 6.

Deposition rate and respective dc and rf power levels, and , absorbed in the plasma (a), and ion-to-film-forming particles flux-ratio, , and ion energy per deposited atom, (b) for films prepared at various argon fractions in the gas mixture, a fixed target erosion area and for (full symbols) and (empty symbols).

Image of FIG. 7.
FIG. 7.

Normalized integral fluxes of individual positive ionic species onto a grounded electrode of the mass spectrometer placed at the position of a substrate in nitrogen-argon discharges with 0% Ar (a); 50% Ar (b); and 100% Ar (c) for a fixed target erosion area at a total pressure and a dc power .

Image of FIG. 8.
FIG. 8.

Elemental composition of films prepared at various argon fractions in the gas mixture, a fixed target erosion area and for (full symbols) and (empty symbols).

Image of FIG. 9.
FIG. 9.

High-resolution photoelectron Si (a), B (b), C (c), and N (d) spectra of films prepared at various argon fractions in the gas mixture, a fixed target erosion area and for (full symbols) and (empty symbols).

Image of FIG. 10.
FIG. 10.

Hardness measured with the presented maximum load (a), and effective Young’s modulus, , and elastic recovery measured with a maximum load of (b) for films prepared at various argon fractions in the gas mixture, a fixed target erosion area and for (full symbols) and (empty symbols).

Image of FIG. 11.
FIG. 11.

HRTEM cross-sectional image with a corresponding SAED pattern taken from a Si–B–C–N film prepared in a gas mixture at a target erosion area, and.

Image of FIG. 12.
FIG. 12.

Thermogravimetric analysis of as-deposited Si–B–C–N (solid curves) and Si–C–N (dashed curves) films in a pure air at a heating rate . The films were prepared in a gas mixture at various compositions of the respective C–Si–B (with a fixed 20% boron fraction in the erosion area) and C–Si targets for and . For a comparison, the results obtained by other authors for selected hard and superhard films are presented.

Loading

Article metrics loading...

/content/avs/journal/jvsta/23/6/10.1116/1.2049298
2005-10-17
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reactive magnetron sputtering of hard Si–B–C–N films with a high-temperature oxidation resistance
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/23/6/10.1116/1.2049298
10.1116/1.2049298
SEARCH_EXPAND_ITEM