Structure of surface reaction layer of poly-Si etched by fluorocarbon plasma
Schematic diagram of plasma beam irradiation apparatus.
Compositions of ion and radical species effusing from gas mixture plasma.
Cross-sectional TEM image of the surface reaction layer.
Sample of deconvoluted peaks of spectrum.
Etch yield of poly-Si as a function of SiF layer thickness.
Composition of bonding state as a function of the etch yield of poly-Si.
Thickness of SiF layer and CF layer as a function of etch yield. Solid line is a least-square-fitting line of SiF layer thickness as an eye guide.
(a) spectra of angle-resolved XPS measurement for takeoff angles (TOAs) of 25° and 90° and (b) spectra of different CF layer thicknesses.
Schematic structure of surface reaction layer of poly-Si etched by fluorocarbon plasma.
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