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Structure of surface reaction layer of poly-Si etched by fluorocarbon plasma
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10.1116/1.2167972
/content/avs/journal/jvsta/24/2/10.1116/1.2167972
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/24/2/10.1116/1.2167972
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of plasma beam irradiation apparatus.

Image of FIG. 2.
FIG. 2.

Compositions of ion and radical species effusing from gas mixture plasma.

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM image of the surface reaction layer.

Image of FIG. 4.
FIG. 4.

Sample of deconvoluted peaks of spectrum.

Image of FIG. 5.
FIG. 5.

Etch yield of poly-Si as a function of SiF layer thickness.

Image of FIG. 6.
FIG. 6.

Composition of bonding state as a function of the etch yield of poly-Si.

Image of FIG. 7.
FIG. 7.

Thickness of SiF layer and CF layer as a function of etch yield. Solid line is a least-square-fitting line of SiF layer thickness as an eye guide.

Image of FIG. 8.
FIG. 8.

(a) spectra of angle-resolved XPS measurement for takeoff angles (TOAs) of 25° and 90° and (b) spectra of different CF layer thicknesses.

Image of FIG. 9.
FIG. 9.

Schematic structure of surface reaction layer of poly-Si etched by fluorocarbon plasma.

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/content/avs/journal/jvsta/24/2/10.1116/1.2167972
2006-02-17
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structure of surface reaction layer of poly-Si etched by fluorocarbon plasma
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/24/2/10.1116/1.2167972
10.1116/1.2167972
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