High-resolution TEM images of annealed at 500, 900, 1000, and . Diffraction patterns are shown in the inset. For , the sample was amorphous but contained silicon-rich regions as indicated by the bright regions in the silicon intensity map in the EFTEM inset (top left panel, lower inset). For specimens annealed at the nanoclusters are crystalline silicon (as determined by the lattice images and electron diffraction) and they are larger for the higher annealing temperatures. The underlying Si wafer is observable at the far right-hand side of the bottom right image.
Photoluminescence of annealed at temperatures between 300 and . For , the PL intensity was very low and the specimen is not labeled.
Photoluminescence color map for the Si–O system. The color on the image is a representation of the color of the peak of the PL spectrum, as indicated by the color scale on the right-hand side of the figure. Data were interpolated to obtain the colors between the 108 known points. An integrated intensity contour map is superimposed (white lines) on a logarithmic scale, with each contour representing a change by a factor of 2.2. The short arrows point to direction of higher intensity.
Specimen compositions determined by the rate monitors and by electron microprobe.
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