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Inductively coupled plasma etching of in and discharges
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10.1116/1.2180266
/content/avs/journal/jvsta/24/3/10.1116/1.2180266
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/24/3/10.1116/1.2180266
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the ICP reactor.

Image of FIG. 2.
FIG. 2.

Etching rate of Si and and selectivity of as a function of Ar flow with fixed at .

Image of FIG. 3.
FIG. 3.

Etching rate of Si and and selectivity of as a function of ICP power with and Ar fixed at .

Image of FIG. 4.
FIG. 4.

Etching rate of Si and and selectivity of as a function of Ar flow with fixed at .

Image of FIG. 5.
FIG. 5.

Etching rate of Si and and selectivity of as a function of ICP power with and Ar fixed at .

Image of FIG. 6.
FIG. 6.

Cross-sectional SEM image of mesa pattern.

Image of FIG. 7.
FIG. 7.

Current-voltage output characteristics of SiGe DCFET with ICP treatments.

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/content/avs/journal/jvsta/24/3/10.1116/1.2180266
2006-05-04
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Inductively coupled plasma etching of Si1−xGex in CF4∕Ar and Cl2∕Ar discharges
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/24/3/10.1116/1.2180266
10.1116/1.2180266
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