Compositional effect on the dielectric properties of high- titanium silicate thin films deposited by means of a cosputtering process
Variation of the content of the cosputtered deposited films as a function of the power applied on the and the targets.
Effect of the composition of the cosputtered thin films on (a) the high-resolution XPS spectra of the O , Si , and Ti core levels and on (b) the region of the FTIR absorbance spectra. The inset shows the variation of the Ti–O–Si peak intensity with the composition of the films.
Density of the cosputtered thin films, as determined from XRR measurements, as a function of their composition. Literature density values for thermal (Ref. 24) and anatase are also shown on the graph. The inset shows a typical XRR curve for a cosputtered film deposited on Si with its corresponding simulated spectrum.
Refractive index (at wavelength) and optical band gap variations with the composition of the cosputtered thin films.
Dielectric constant of the cosputtered thin films as a function of their composition. The inset shows typical dielectric constant and dissipation factor vs frequency curves (in the case of film).
Leakage current density vs electric field curves for cosputtered thin films with various compositions. The inset shows the composition dependence of the soft breakdown field of the cosputtered films.
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