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High-performance -channel plasma-enhanced chemical vapor deposition nanocrystalline silicon thin-film transistors
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10.1116/1.2194027
/content/avs/journal/jvsta/24/3/10.1116/1.2194027
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/24/3/10.1116/1.2194027
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic cross section of a top-gate staggered n-channel nc-Si:H TFT.

Image of FIG. 2.
FIG. 2.

Dark conductivity and Raman crystalline volume fraction as a function of nc-Si:H film thickness.

Image of FIG. 3.
FIG. 3.

AFM (a) top-view and (b) three-dimensional images for a nc-Si:H film.

Image of FIG. 4.
FIG. 4.

SIMS depth profiles for hydrogen and oxygen concentration as a function of nc-Si:H film thickness.

Image of FIG. 5.
FIG. 5.

Output characteristics at a gate-source voltage of for TFT channel lengths of 20, 50, 100, and with a constant channel width of .

Image of FIG. 6.
FIG. 6.

Transfer and transconductance characteristics at a drain-source voltage of for the same family of TFTs depicted in Fig. 5.

Image of FIG. 7.
FIG. 7.

Relationship between the channel length modulation parameter and the field-effect mobility.

Image of FIG. 8.
FIG. 8.

Off-sate leakage current dependent on the channel length modulation parameter.

Image of FIG. 9.
FIG. 9.

Extracted values of the field-effect mobility, threshold voltage, and subthreshold slope as a function of TFT channel length, along with the field-effect mobility calculated from the transconductance as shown in FIG. 6.

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/content/avs/journal/jvsta/24/3/10.1116/1.2194027
2006-05-04
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-performance n-channel 13.56MHz plasma-enhanced chemical vapor deposition nanocrystalline silicon thin-film transistors
http://aip.metastore.ingenta.com/content/avs/journal/jvsta/24/3/10.1116/1.2194027
10.1116/1.2194027
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