Schematic cross section of a top-gate staggered n-channel nc-Si:H TFT.
Dark conductivity and Raman crystalline volume fraction as a function of nc-Si:H film thickness.
AFM (a) top-view and (b) three-dimensional images for a nc-Si:H film.
SIMS depth profiles for hydrogen and oxygen concentration as a function of nc-Si:H film thickness.
Output characteristics at a gate-source voltage of for TFT channel lengths of 20, 50, 100, and with a constant channel width of .
Transfer and transconductance characteristics at a drain-source voltage of for the same family of TFTs depicted in Fig. 5.
Relationship between the channel length modulation parameter and the field-effect mobility.
Off-sate leakage current dependent on the channel length modulation parameter.
Extracted values of the field-effect mobility, threshold voltage, and subthreshold slope as a function of TFT channel length, along with the field-effect mobility calculated from the transconductance as shown in FIG. 6.
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